vishay siliconix SI7107DN document number: 73041 s10-0347-rev. e, 15-feb-10 www.vishay.com 1 p-channel 20 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet: 1.8 v rated ? ultra low on-resistance for increased battery life ? new powerpak ? package - low thermal resistance, r thjc - low 1.07 mm profile ? compliant to rohs directive 2002/95/ec applications ? load/power switching in portable devices product summary v ds (v) r ds(on) ( )i d (a) - 20 0.0108 at v gs = - 4.5 v - 15.3 0.015 at v gs = - 2.5 v - 13.0 0.020 at v gs = - 1.8 v - 11.2 1 2 3 4 5 6 7 8 s s s g d d d d 3.30 mm 3.30 mm powerpak 1212-8 bottom view ordering information: SI7107DN-t1-e3 (lead (pb)-free) SI7107DN-t1-ge3 (lead (pb)-free and halogen-free) s g d p-channel mosfet notes: a. surface mounted on 1" x 1" fr4 board. b. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak 1212-8 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. c. rework conditions: manual soldering with a solder ing iron is not recommended for leadless components. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 10 s steady state unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) a t a = 25 c i d - 15.3 - 9.8 a t a = 70 c - 12.2 - 7.8 pulsed drain current i dm - 40 continuous source current (diode conduction) a i s - 3.2 - 1.3 maximum power dissipation a t a = 25 c p d 3.8 1.5 w t a = 70 c 2.4 1.0 operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) b, c 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 10 s r thja 24 33 c/w steady state 65 81 maximum junction-to-case steady state r thjc 1.9 2.4
www.vishay.com 2 document number: 73041 s10-0347-rev. e, 15-feb-10 vishay siliconix SI7107DN notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics 25 c, unless otherwise noted specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 450 a - 0.4 - 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 55 c - 5 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 40 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 15.3 a 0.0090 0.0108 v gs = - 2.5 v, i d = - 13 a 0.0125 0.015 v gs = - 1.8 v, i d = - 5 a 0.0167 0.020 forward transconductance a g fs v ds = - 15 v, i d = - 15.3 a 58 s diode forward voltage a v sd i s = - 3.2 a, v gs = 0 v - 0.7 - 1.2 v dynamic b total gate charge q g v ds = - 10 v, v gs = - 4.5 v, i d = - 15.3 a 34 44 nc gate-source charge q gs 4.6 gate-drain charge q gd 9.2 gate resistance r g f = 1 mhz 8 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 10 i d ? - 1 a, v gen = - 4.5 v, r g = 6 27 40 ns rise time t r 55 85 turn-off delay time t d(off) 270 400 fall time t f 160 240 source-drain reverse recovery time t rr i f = - 3.2 a, di/dt = 100 a/s 110 165 output characteristics 0 5 10 15 20 25 30 35 40 012345 1 v v ds - drain-to-source voltage (v) - drain current (a) i d 1.5 v v gs = 5 v thru 2 v transfer characteristics 0 5 10 15 20 25 30 35 40 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 25 c t c = 125 c - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d
document number: 73041 s10-0347-rev. e, 15-feb-10 www.vishay.com 3 vishay siliconix SI7107DN typical characteristics 25 c, unless otherwise noted on-resistance vs. drain current gate charge source-drain diode forward voltage - on-resistance ( ) r ds(on) i d - drain current (a) 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 0 10203040506070 v gs =1.8v v gs =4.5v v gs =2.5v 0 1 2 3 4 5 0 5 10 15 20 25 30 35 40 v ds = 10 v i d = 15.3 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs v sd - source-to-drain voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 25 c 40 10 1 - source current (a) i s t j = 150 c capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 1000 2000 3000 4000 5000 048121620 c rss c oss c iss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 4.5 v i d = 15.3 a t j - junction temperature (c) r ds(on) - on-resistance (normalized) - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) 0.00 0.01 0.02 0.03 0.04 0.05 012345 i d = 15.3 a i d =5a
www.vishay.com 4 document number: 73041 s10-0347-rev. e, 15-feb-10 vishay siliconix SI7107DN typical characteristics 25 c, unless otherwise noted threshold voltage - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 450 a variance (v) v gs(th) t j - temperature (c) single pulse power, junction-to-ambient 0.01 0 1 40 50 10 600 time (s) 30 20 power (w) 0.1 10 100 safe operating area v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 100 1 0.1 1 10 100 0.01 10 t a = 25 c single pulse - drain current (a) i d 0.1 i dm limited i d(on) limited limited by r ds(on) * bvdss limited p(t) = 10 dc p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 81 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
document number: 73041 s10-0347-rev. e, 15-feb-10 www.vishay.com 5 vishay siliconix SI7107DN typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73041 . normalized thermal transient impedance, junction-to-case 10 -3 10 -2 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance
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